EMP111 updated 10/05/2004 7.0 ? 9.0 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2004 dimension: 1130um x 2250um thickness: 85um + 13um features ? 7.0 ? 9.0 ghz operating frequency range ? 27.0dbm output power at 1db compression ? 18.0 db typical small signal gain ? -40dbc oimd3 @each tone pout 17 dbm applications ? point-to-point and point-to-multipoint radio ? military radar systems caution! esd sensitive device. electrical characteristics ( tb = 25 c, 50 ohm, vds = 7 v, idsq = 400 ma, unless otherwise specified ) symbol parameter/test conditions min typ max units f operating frequency range 7.0 9.0 ghz p1db output power at 1db gain compression 26.0 27.0 dbm gss small signal gain 15.0 18.0 db oimd3 output 3 rd order intermodulation distortion @ ? f=10mhz, each tone pout 17dbm, 7v, 60%+ 10%idss -41 -38 dbc input rl input return loss -12 -8 db output rl output return loss -6 db idss saturated drain current vds =3v, v gs =0v 475 620 750 ma vds drain to source voltage 7 8 v nf noise figure @8ghz 8 db rth thermal resistance (au-sn eutectic attach) 22 o c/w tb operating base plate temperature - 35 + 85 oc maximum ratings at 25c 1,2 symbol characteristic absolute continuous vds drain to source voltage 12v 8 v v gs gate to source voltage -8v - 4 v ids drain current idss 650ma i gsf forward gate current 57ma 9.5 ma p in input power 24dbm @ 3db compression t ch channel temperature 175c 150c t stg storage temperature -65/175c -65/150c p t total power dissipation 6.2w 5.2w 1. operating the device beyond any of the above rating may result in permanent damage. 2. bias conditions must also satisfy the following equation vds*ids < (t ch ?tb)/r th
EMP111 updated 10/05/2004 7.0 ? 9.0 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2004 typical performance: 1. small signal performance (@7v, 400ma) 6 7 8 9 10 11 frequency (ghz) EMP111 small signal performance -25 -20 -15 -10 -5 0 5 10 15 20 db(|s[2,1]|) * db(|s[1,1]|) * db(|s[2,2]|) * 2. oimd vs pout @7v, 400ma (@8ghz, ? f=10mhz) 3. p-1 vs vds @idsq=400ma EMP111 oimd (dbc) vs. pout(dbm) -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 each tone pout (dbm) oi md (dbc) oimd3 EMP111 p1db(dbm) vs. vds 22 23 24 25 26 27 28 29 30 678910 frequency (ghz) dbm vds=5v vds=7v application information (caution: this is an esd sensitive device) chip carrier should match gaas thermal coefficienat of expansion and have hi gh thermal conductivity, such as copper tungsten or copper molybdenum. the chip carrier should be nickel-gold plated and capable of withstanding 325oc for 20 minutes. die attach should be done with gold/tin (80/20) eutectic alloy in inert ambient gas. the backside is used as heatsinking, dc, and rf contacts. all die attach and wire bond equipment, especially the tool s which touch a die, should be well grounded to avoid accidental discharge through a die.
EMP111 updated 10/05/2004 7.0 ? 9.0 ghz power amplifier mmic specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 3 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2004 assembly drawing the length of rf wires should be as short as possible. use at least two wires between rf pad and 50 ohm line and separate the wires to minimize the mutual inductance. chip outline chip size 1130 x 2250 microns chip thickness: 85 13 microns pad dimensions: 100 x 100 microns all dimensions in microns
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